What is V-NAND and how does it differ from existing technology?

Samsung's flash memory is fabricated using an innovative 3D V-NAND architecture, which stacks cell layers on top of one another rather than trying to decrease the cells' length and width to fit today's shrinking form factors. The result is higher density and higher performance using a smaller footprint and a breakthrough in overcoming the density limits of conventional planar NAND architecture.

Boost performance with an industry-leading 3D V-NAND SSD

Powered by Samsung's cutting-edge 3D V-NAND technology, the NAND flash memory delivers the ultimate in read and write performance in both sequential and random aspects. This is especially impressive in the 128 GB model* that outperforms similar models on the market by more than 80 MB/s in write speed.

* 850 PRO 128 GB Sequential Write speed: 470 MB/s

Ensure each component works together seamlessly

Samsung is one of the few manufacturers that actually design all the SSD components in-house and has the most experience in the SSD market. Because Samsung has intimate knowledge of every component and its parts, it can fine-tune them at each stage of development to ensure they work together beautifully. The result – enhanced performance, lower power consumption with an up to 1 GB LPDDR2 DRAM cache memory and improved energy-efficiency with the 3-core MEX controller.

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